Medium-Power Plastic NPNSilicon Transistors
...designed for driver circuits, switching, and amplifierapplications. These high–performance plastic devices feature:
•Low Saturation Voltage —••••
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction —PD = 30 W @ TC = 25_CExcellent Safe Operating AreaGain Specified to IC = 1.0 Amp
Complement to PNP 2N4918, 2N4919, 2N4920
*MAXIMUM RATINGSRatingCollector–Emitter VoltageCollector–Base VoltageEmitter–Base VoltageCollector Current — Continuous (1)Base Current — ContinuousTotal Power Dissipation @ TC = 25_CDerate above 25_COperating & Storage JunctionTemperature RangeSymbolVCEOVCBVEBICIBPDTJ, Tstg2N492140402N492260605.01.03.01.0300.242N49238080UnitVdcVdcVdcAdcAdcWattsW/_C_C–65 to +150THERMAL CHARACTERISTICS (2)CharacteristicThermal Resistance, Junction to CaseSymbolθJCMaxUnit4.16_C/W(1)The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current handling capability of thedevice (see Figures 5 and 6).(2)Recommend use of thermal compound for lowest thermal resistance.*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
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2N4921 thru 2N4923
40PD, POWER DISSIPATION (WATTS)30
20
10
0
2550
75100
TC, CASE TEMPERATURE (°C)
125150
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
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2N4921 thru 2N4923
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)CharacteristicOFF CHARACTERISTICSSymbolMinMaxUnitCollector–Emitter Sustaining Voltage (3)(IC = 0.1 Adc, IB = 0)2N49212N49222N49232N49212N49222N4923VCEO(sus)Vdc406080——————————Collector Cutoff Current(VCE = 20 Vdc, IB = 0)(VCE = 30 Vdc, IB = 0)(VCE = 40 Vdc, IB = 0)ICEOmAdc0.50.50.50.10.50.11.0Collector Cutoff Current(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_CCollector Cutoff Current(VCB = Rated VCB, IE = 0)Emitter Cutoff Current(VEB = 5.0 Vdc, IC = 0)ICEXmAdcICBOIEBOmAdcmAdcON CHARACTERISTICSDC Current Gain (3)(IC = 50 mAdc, VCE = 1.0 Vdc)(IC = 500 mAdc, VCE = 1.0 Vdc)(IC = 1.0 Adc, VCE = 1.0 Vdc)hFE—403010————150—0.61.31.3Collector–Emitter Saturation Voltage (3)(IC = 1.0 Adc, IB = 0.1 Adc)Base–Emitter Saturation Voltage (3)(IC = 1.0 Adc, IB = 0.1 Adc)Base–Emitter On Voltage (3)(IC = 1.0 Adc, VCE = 1.0 Vdc)VCE(sat)VBE(sat)VBE(on)VdcVdcVdcSMALL–SIGNAL CHARACTERISTICSCurrent–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)fT3.0——MHzpF—Cobhfe100—Small–Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)25(3) Pulse Test: PW ≈ 300 µs, Duty Cycle ≈ 2.0%.*Indicates JEDEC Registered Data.
APPROX+11 VVinVBE(off)
TURN-ON PULSEt1VCCVinRC5.03.02.01.00.70.50.30.2
tdVCC = 30 VIC/IB = 20t, TIME (ăµĂs)RBCjdĂ<<ĂCeb-ā4.0 Vt1 ≤ 15 ns100 < t2 ≤ 500 µst3 ≤15 nsIC/IB = 10, UNLESS NOTEDTJ = 25°CTJ = 150°CVCC = 60 VAPPROX+11 VVint3SCOPEVCC = 30 VtrVCC = 60 VVBE(off) = 2.0 VAPPROX 9.0 Vt2TURN-OFF PULSE
obtain desiredcurrent levels
0.1
DUTY CYCLE ≈ 2.0%0.07RB and RC varied to0.05
VCC = 30 VVBE(off) = 01020305070100200300IC, COLLECTOR CURRENT (mA)
5007001000Figure 2. Switching Time Equivalent Circuit
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Figure 3. Turn–On Time
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2N4921 thru 2N4923
1.00.70.50.30.2
D = 0.50.20.10.050.01SINGLE PULSEP(pk)θJC(t) = r(t) θJCθJC = 4.16°C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNt1READ TIME AT t1t2TJ(pk) - TC = P(pk) θJC(t)DUTY CYCLE, D = t1/t2r(t), TRANSIENT THERMALRESISTANCE (NORMALIZED)0.10.070.050.030.020.010.010.020.030.050.10.20.30.51.02.03.05.0t, TIME (ms)
102030501002003005001000Figure 4. Thermal Response
107.05.03.02.0
TJ = 150°CIC, COLLECTOR CURRENT (AMP)5.0 msdc1.0 ms100 µs1.00.70.50.30.20.11.0SECOND BREAKDOWNLIMITEDBONDING WIRE LIMITEDTHERMALLY LIMITED @ TC = 25°CPULSE CURVES APPLY BELOWRATED VCEO2.03.05.07.01020305070VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100There are two limitations on the power handling ability ofa transistor: average junction temperature and secondbreakdown. Safe operating area curves indicate IC – VCEoperation i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TCis variable depending on conditions. Second breakdownpulse limits are valid for duty cycles to 10% provided TJ(pk)v 150_C. At high case temperatures, thermal limitationswill reduce the power that can be handled to values less thanthe limitations imposed by second breakdown.
Figure 5. Active–Region Safe Operating Area
5.03.02.0ts′, STORAGE TIME (ăµĂs)1.00.7
0.50.30.2
IC/IB = 10IC/IB = 20IC/IB = 20tf, FALL TIME (ăµĂs)5.03.02.01.00.70.50.30.2IC/IB = 10TJ = 25°CTJ = 150°CVCC = 30 VIB1 = IB25007001000IC/IB = 200.10.070.05
TJ = 25°CTJ = 150°CIB1 = IB2ts′ = ts - 1/8 tf1020302003005070100IC, COLLECTOR CURRENT (mA)
50070010000.10.070.051020305070100200300IC, COLLECTOR CURRENT (mA)
Figure 6. Storage TimeFigure 7. Fall Time
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2N4921 thru 2N4923
VCE = 1.0 VVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)1000700500hFE, DC CURRENT GAIN30020010070503020
10
2.03.05.010203050100200300500IC, COLLECTOR CURRENT (mA)
10002000TJ = 150°C25°C-ā55°C1.00.80.60.40.20
0.20.3IC = 0.1 A0.25 A0.5 A1.0 ATJ = 25°C0.51.02.03.05.0102030IB, BASE CURRENT (mA)
50100200Figure 8. Current Gain
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)Figure 9. Collector Saturation Region
108
IC = 10 x ICES107106
IC ≈ICES105104103
ICES VALUESOBTAINED FROMFIGURE 120306090120150VOLTAGE (VOLTS)IC = 2 x ICESVCE = 30 V1.5TJ = 25°C1.20.90.60.302.03.05.0VCE(sat) @ IC/IB = 101020305010020030050010002000IC, COLLECTOR CURRENT (mA)
VBE(sat) @ IC/IB = 10VBE @ VCE = 2.0 VTJ, JUNCTION TEMPERATURE (°C)
Figure 10. Effects of Base–Emitter ResistanceFigure 11. “On” Voltage
104IC, COLLECTOR CURRENT (ăµĂA)10310210110010-110-ā2
-ā0.2REVERSE-ā0.10+ā0.1FORWARD+ā0.2+ā0.3+ā0.4+ā0.5IC = ICESVCE = 30 VTJ = 150°C100°C25°CTEMPERATURE COEFFICIENTS (mV/°C)+ā2.5+ā2.0+ā1.5+ā1.0+ā0.50-ā0.5-ā1.0-ā1.5-ā2.0-ā2.52.03.05.010θVB FOR VBE20305010020030050010002000*θVC FOR VCE(sat)-ā55°C to +100°C*APPLIES FOR IC/IB ≤hFEĂ@ĂVCEĂ+Ă1.0ĂV2TJ = 100°C to 150°CVBE, BASE-EMITTER VOLTAGE (VOLTS)IC, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut–Off RegionFigure 13. Temperature Coefficients
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2N4921 thru 2N4923
PACKAGE DIMENSIONS
CASE 77–08TO–225AA TYPE
ISSUE V
–B–UQ–A–123FMCNOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.DIMABCDFGHJKMQRSUVINCHESMINMAX0.4250.4350.2950.3050.0950.1050.0200.0260.1150.1300.094 BSC0.0500.0950.0150.0250.5750.6555 TYP_0.1480.1580.0450.0550.0250.0350.1450.1550.040---MILLIMETERSMINMAX10.8011.047.507.742.422.660.510.662.933.302.39 BSC1.272.410.390.6314.6116.635 TYP_3.764.011.151.390.640.883.693.931.02---HKVGSD2 PL0.25 (0.010)MJR0.25 (0.010)AMAMMBMBMSTYLE 1:PIN 1.EMITTER2.COLLECTOR3.BASE
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2N4921 thru 2N4923
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2N4921 thru 2N4923
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