专利名称：Method of forming dual damascene
structure
发明人：Ji Soo Kim,Sangheon Lee,S. M. Reza Sadjadi申请号：US11016304申请日：20041216公开号：US07098130B1公开日：20060829
专利附图：
摘要：A method for forming dual damascene features in a dielectric layer. Vias arepartially etched in the dielectric layer. A trench pattern mask is formed over the dielectriclayer. Trenches are partially etched in the dielectric layer. The trench pattern mask is
stripped. The dielectric layer is further etched to complete etch the vias and the trenchesin the dielectric layer.
申请人：Ji Soo Kim,Sangheon Lee,S. M. Reza Sadjadi
地址：Pleasanton CA US,Sunnyvale CA US,Saratoga CA US
国籍：US,US,US
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