专利名称：RESISTIVE MEMORY APPARATUS HAVING
HIERARCHICAL BIT LINE STRUCTURE
发明人：Ki Myung KYUNG申请号：US14329478申请日：20140711
公开号：US20150278128A1公开日：20151001
专利附图：
摘要：A resistive memory apparatus includes a plurality of bit lines, a plurality of localbit lines, and a plurality of global bit lines. The plurality of bit lines is electrically coupledto a plurality of memory cells. The plurality of local bit lines are extended in a row
direction, and electrically coupled to one or more of the plurality of bit lines. Theplurality of global bit lines are extended in the column direction, and electrically coupledto one or more of the plurality of local bit lines.
申请人：SK hynix Inc.
地址：Icheon-si Gyeonggi-do KR
国籍：KR
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