专利名称：Process for producing a silicon single crystal,
and heater for carrying out the process
发明人：Wilfried Von Ammon,Erich Tomzig,Paul
Fuchs,Yuri Gelfgat
申请号：US08/977584申请日：19971125公开号：US06117230A公开日：20000912
摘要：A process for producing a silicon single crystal by the Czochralski method,utilizes a heater which is intended for heating a silicon-filled crucible and is arrangedbelow the crucible. The process has energy delivered to the melt at least some of thetime inductively using a coiled heater arranged under the crucible. The heater is in theform of a wound coil.
申请人：WACKER SILTRONIC GESELLSCHAFT FUER HALBLEITERMATERIALIEN AG
代理机构：Collard & Roe, P
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