专利名称：STRUCTURE AND METHOD FOR
REPLACEMENT GATE MOSFET WITH SELF-ALIGNED CONTACT USING SACRIFICIALMANDREL DIELECTRIC
发明人：Shahab Siddiqui,Michael P. Chudzik,Carl J.
Radens
申请号：US12795962申请日：20100608
公开号：US20110298061A1公开日：20111208
专利附图：
摘要：The present disclosure provides a method for forming a semiconductor devicethat includes forming a replacement gate structure overlying a channel region of asubstrate. A mandrel dielectric layer is formed overlying source and drain regions of thesubstrate. The replacement gate structure is removed to provide an opening exposingthe channel region of the substrate. A functional gate structure is formed over thechannel region including a work function metal layer. A protective cap structure is formedover the functional gate structure. At least one via is etched through the mandreldielectric layer selective to the protective cap structure to expose a portion of at leastone of the source region and the drain region. A conductive fill is then formed in the viasto provide a contact to the at least one of the source region and the drain region.
申请人：Shahab Siddiqui,Michael P. Chudzik,Carl J. Radens
地址：White Plains NY US,Danbury CT US,LaGrangeville NY US
国籍：US,US,US
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