专利名称：Component of protection of an integrated
MOS power transistor against voltagegradients
发明人：Jean Barret,Antoine Pavlin,Pietro Fichera申请号：US09/085521申请日：19980527公开号：US06057577A公开日：20000502
摘要：The present invention relate to a device of protection against voltage gradientsof a monolithic component including a vertical MOS power transistor and logic circuits.The protection circuit has an N- type substrate corresponding to the drain of the MOStransistor, and logic components being realized in at least one P-type well formed in theupper surface of the substrate. Each of the N-type regions connected to the ground ofthe logic circuit, or to a node of low impedance with respect to the ground, is in serieswith a resistor.
申请人：STMICROELECTRONICS S.A.
代理人：Theodore E. Galanthay,RobertSeed IP Law Group Iannucci
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