专利名称：Chemical vapor deposition method using a
plasma self-cleaning
发明人：Atsuhiro Tsukune,Kenji Koyama申请号：US07/490887申请日：19900309公开号：US05041311A公开日：19910820
摘要：A CVD method comprises the steps of making a plasma self- cleaning within achamber using a gas which includes fluorine, coating an inside of the chamber by a firstlayer of a material which includes silicon and nitrogen, and forming a second layer on apredetermined surface within the chamber by a chemical vapor deposition. The secondlayer is made of a material which includes a quantity of nitrogen smaller than a quantityof nitrogen included in the first layer.
申请人：FUJITSU LIMITED
代理机构：Armstrong, Nikaido, Marmelstein, Kubovcik & Murray
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