专利名称：DEVICE AND MANUFACTURING METHOD
THEREOF
发明人：Yoshihiro TAKAISHI申请号：US12781429申请日：20100517
公开号：US20100295110A1公开日：20101125
专利附图：
摘要：A device manufacturing method includes forming a first insulation film on asemiconductor substrate. A first mask is formed on the first insulation film to extend in afirst direction and have a linear pattern. The first insulation film is etched using the first
mask as mask to process the insulation film into a linear body. A second mask is formedon the linear body to extend in a second direction different from the first direction andhave a linear pattern. The linear body is etched using the second mask as mask toprocess the linear body into a pillar element. A first conductive film is formed to coverthe pillar body. The first conductive film is etched to form a first electrode of the firstconductive film on side surfaces of the pillar body.
申请人：Yoshihiro TAKAISHI
地址：Tokyo JP
国籍：JP
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