N-CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPESTP60NF06STP60NF06FP
ssss
VDSS60 V60 V
RDS(on)< 0.016 Ω< 0.016 Ω
ID60A60A
TYPICAL RDS(on) = 0.014Ω
EXCEPTIONAL dv/dt CAPABILITY100% AVALANCHE TESTEDAPPLICATION ORIENTED CHARACTERIZATION
TO-220123123TO-220FPDESCRIPTION
This Power Mosfet series realized with STMicro-electronics unique STripFET process has specifical-ly been designed to minimize input capacitance andgate charge. It is therefore suitable as primaryswitch in advanced high-efficiency isolated DC-DCconverters for Telecom and Computer application. Itis also intended for any application with low gatecharge drive requirements.
APPLICATIONS
sHIGH-EFFICIENCY DC-DC CONVERTERSsUPS AND MOTOR CONTROLsAUTOMOTIVE
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
SymbolVDSVDGRVGSIDIDIDM (l)PTOTdv/dt (1)VISOTstgTj
January 2002
Parameter
STP60NF06
Drain-source Voltage (VGS = 0)Drain-gate Voltage (RGS = 20 kΩ)Gate- source Voltage
Drain Current (continuos) at TC = 25°CDrain Current (continuos) at TC = 100°CDrain Current (pulsed)Total Dissipation at TC = 25°CDerating Factor
Peak Diode Recovery voltage slopeInsulation Winthstand Voltage (DC)Storage Temperature
Max. Operating Junction Temperature
--–65 to 175
(1) ISD≤ 60A, di/dt≤400 A/µs, VDD≤ 24V, Tj≤TjMAX
Value
STP60NF06FP
6060± 20
60422401100.73
4
25003726148420.28
UnitVVVAAAWW/°CV/nsV°C
(q) Pulse width limited by safe operating area
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THERMAL DATA
TO-220
Rthj-caseRthj-amb
Tl
Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxMaximum Lead Temperature For Soldering Purpose
1.36
62.5300
TO-220FP3.57
°C/W°C/W°C
AVALANCHE CHARACTERISTICS
SymbolIAREAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 30 V)
Max Value
30360
UnitAmJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
SymbolV(BR)DSSIDSSIGSS
Parameter
Drain-source
Breakdown VoltageZero Gate Voltage
Drain Current (VGS = 0)Gate-body LeakageCurrent (VDS = 0)
Test Conditions
ID = 250 µA, VGS = 0VDS = Max Rating
VDS = Max Rating, TC = 125 °CVGS = ± 20V
Min.60
110±100
Typ.
Max.
UnitVµAµAnA
ON (1)
SymbolVGS(th)RDS(on)
Parameter
Gate Threshold VoltageStatic Drain-source On Resistance
Test Conditions
VDS = VGS, ID = 250µAVGS = 10V, ID = 30 A
Min.2
0.014Typ.
Max.40.016
UnitVΩ
DYNAMIC
Symbolgfs (1)CissCossCrss
Parameter
Forward TransconductanceInput CapacitanceOutput CapacitanceReverse Transfer Capacitance
Test Conditions
VDS =15V , ID= 30 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.201810360125
Max.
UnitSpFpFpF
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ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
Symboltd(on)trQgQgsQgd
Parameter
Turn-on Delay Time Rise TimeTotal Gate ChargeGate-Source ChargeGate-Drain Charge
Test Conditions
VDD = 30 V, ID = 30 A RG=4.7Ω VGS = 10V(see test circuit, Figure 3)VDD = 48V, ID =60A,VGS = 10V
Min.
Typ.16108491814
66Max.
UnitnsnsnCnCnC
SWITCHING OFF
Symboltd(off)tftd(off)tftc
Parameter
Turn-off-Delay TimeFall Time
Off-voltage Rise TimeFall Time
Cross-over Time
Test Conditions
VDD = 30 V, ID = 30 A,RG=4.7Ω, VGS = 10V(see test circuit, Figure 3)Vclamp =48V, ID = 60 A RG=4.7Ω, VGS = 10V(see test circuit, Figure 3)
Min.
Typ.4320401221
Max.
Unitnsnsnsnsns
SOURCE DRAIN DIODE
SymbolISDISDM (2)VSD (1)trrQrrIRRM
Parameter
Source-drain CurrentSource-drain Current (pulsed)Forward On VoltageReverse Recovery TimeReverse Recovery ChargeReverse Recovery Current
ISD = 60 A, VGS = 0ISD = 60 A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C(see test circuit, Figure 5)
731825
Test Conditions
Min.
Typ.
Max.602401.3
UnitAAVnsnCA
Note:1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2.Pulse width limited by safe operating area.
Safe Operating Area for TO-220Safe Operating Area for TO-220FP3/9
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Thermal Impedence for TO-220Thermal Impedence for TO-220FPOutput CharacteristicsTransfer CharacteristicsTransconductanceStatic Drain-source On Resistance4/9
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Gate Charge vs Gate-source VoltageCapacitance VariationsNormalized Gate Threshold Voltage vsTemperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
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TO-220 MECHANICAL DATADIM.ACDD1EFF1F2GG1H2L2L4L5L6L7L9DIA.mmMIN.4.401.232.400.490.611.141.144.952.410.013.02.6515.256.23.53.75TYP.MAX.MIN.0.1730.0480.0940.0190.0240.0440.0440.1940.0940.3930.5110.1040.6000.2440.1370.147 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.7 10.40 14.0 2.95 15.75 6.6 3.93 3.85inchTYP.MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 1.27 0.050 16.4 0.645ACD1L2DF1G1EDia.L5L7L6L4P011CL9F2FGH27/9
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TO-220FP MECHANICAL DATAmm.MIN.4.42.52.50.450.751.151.154.952.4101628.69.82.915.99330.610.63.616.49.33.21.126.03850.1140.6260.3540.118TYPMAX.4.62.72.750.711.71.75.22.710.4MIN.0.1730.0980.0980.0170.0300.0450.0450.1950.0940.3930.6301.2040.4170.1410.6450.3660.126inchTYP.MAX.0.1810.1060.1080.0270.0390.0670.0670.2040.1060.409DIM.ABDEFF1F2GG1HL2L3L4L5L6L7ØABL3L6L7F1DFG1EHF2L2L5123L48/9
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