专利名称：TIME-DETECTION DEVICE AND TIME-DETECTION METHOD BY USING A SEMI-CONDUCTOR ELEMENT
发明人：PALM, HERBERT,WOHLRAB,
ERDMUTE,TADDIKEN, HANS
申请号：EP02700209.6申请日：20020131公开号：EP1362332A1公开日：20031119
摘要：The present invention relates to a kind of time devices using floating gate cell,wherein have floating gate and control gate between ON-layer structures or an ONO-layer structures. Charge injection device supply is sequentially inserted into ON-structureor the ONO-layer structures that floating gate electrode enters the nitride layer, andwherein voltage or voltage pulse are applied to the control of gate electrode, and it is tobe located to limit surface that center of gravity charge, which is injected into nitridelayer,. Described device further includes elapsed time injection charge after the time fordetection, and based on the transport behavior to channel region, the center of gravityof these displacement charges realized is left in nitride layer limits surface.
申请人：INFINEON TECHNOLOGIES AG
地址：St.-Martin-Strasse 53 81669 München DE
国籍：DE
代理机构：Stöckeler, Ferdinand, Dipl.-Ing.
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