CHARGE PUMP CIRCUIT AND SLICE LEVEL CONTROL CIRCUI

专利名称：CHARGE PUMP CIRCUIT AND SLICE LEVEL

CONTROL CIRCUIT

发明人：Tsuyoshi Yoshimura,Taichiro Kawai申请号：US12132996申请日：20080604

公开号：US20080297232A1公开日：20081204

专利附图：

摘要：The invention provides a charge pump circuit which reduces rise time of anoutput current even when an input signal is of high frequency. PMOS and PMOS havegates connected to each other, and the gate of the PMOS is connected to the drain

thereof. A supply potential (Vdd) is applied to the sources of the PMOS and the PMOS,and the PMOS and the PMOS form a current mirror circuit. First and second switchingelements and a first constant-current source are connected to the drain of the PMOS. Aconnection point (a node) of the first switching element and the second switchingelement is connected to an output terminal. The drain of the PMOS is connected to thefirst constant-current source through a third switching element, and connected to asecond constant-current source through a fourth switching element.

申请人：Tsuyoshi Yoshimura,Taichiro Kawai

地址：Ora-Gun JP,Kiryu-Shi JP

国籍：JP,JP

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