专利名称：SEMICONDUCTOR MEMORY DEVICE AND
METHOD OF FORMING THE SAME
发明人：KIYOTAKA IMAI申请号：US09419307申请日：19991018
公开号：US20030032250A1公开日：20030213
专利附图：
摘要：In accordance with the present invention, the gate length and the gate
insulation film thickness are different between the p-channel MOS field effect transistorsserving as the driver gates and the n-channel MOS field effect transistors forming the flip
flop. Namely, the p-channel MOS field effect transistors serving as the driver gates have alarger gate length and a smaller gate oxide film thickness than the n-channel MOS fieldeffect transistors forming the flip flop.
申请人：IMAI KIYOTAKA
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容