专利名称：CVD-REACTOR WITH A SUBSTRATE HOLDER
HAVING A MULTIPLE ZONE GAS CUSHION
发明人：RUDA Y WITT, FRANCISCO,KÄPPELER,
JOHANNES
申请号：EP10763696.1申请日：20101008公开号：EP2488679B1公开日：20141126
摘要：The invention relates to a CVD reactor having a process chamber (23) and asubstrate holder support (1) arranged therein, said support comprising at least onebearing surface (4), wherein a plurality of gas inlet lines (7, 8) open out into the bearingsurface (4'). The CVD reactor further has a substrate holder (2), the back side thereoffacing the bearing surface (4'), wherein the gases fed through the gas inlet lines (7,8) intothe space between the bearing surface (4') and back side form a gas cushion (19)supporting the substrate holder (2). According to the invention, the gas cushion
comprises a plurality of zones (A, C) that each can be fed through an associated gas inletline (7, 8) and that are separated from each other by a means (15) preventing gasexchange between the zones (A, C). At least one inner zone (C) is associated with a gasdischarge line (13, 14), via which the gas fed into the inner zone (C) by way of the inlet line(7, 8) can be discharged. Gases having different heat conduction properties are fed intothe zones.
申请人：AIXTRON SE,AIXTRON SE,AIXTRON SE
地址：DE
国籍：DE
代理机构：Grundmann, Dirk
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