Nitride semiconductor layer structure and a nitrid

专利名称：Nitride semiconductor layer structure and a

nitride semiconductor laser incorporating aportion of same

发明人：Hiroshi Amano,Isamu Akasaki,Yawara

Kaneko,Norihide Yamada,TetsuyaTakeuchi,Satoshi Watanabe

申请号：US10040328申请日：20011219

公开号：US20020094002A1公开日：20020718

专利附图：

摘要：The nitride semiconductor layer structure comprises a buffer layer and acomposite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is alayer of a single-crystal nitride semiconductor material that includes AlN. The compositelayer includes a first sub-layer adjacent the buffer layer and a second sub-layer over thefirst sub-layer. The single-crystal nitride semiconductor material of the composite layerhas a first AlN molar fraction in the first sub-layer and has a second AlN molar fraction inthe second sub-layer. The second AlN molar fraction is greater than the first AlN molarfraction. The nitride semiconductor laser comprises a portion of the above-describednitride semiconductor layer structure, and additionally comprises an optical waveguidelayer over the composite layer and an active layer over the optical waveguide layer.

申请人：AMANO HIROSHI,AKASAKI ISAMU,KANEKO YAWARA,YAMADANORIHIDE,TAKEUCHI TETSUYA,WATANABE SATOSHI

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