Memory cell arrays and methods for producing memor

专利名称：Memory cell arrays and methods for

producing memory cell arrays

发明人：Dominik Olligs,Torsten Mueller,Karl-Heinz

Kuesters,Veronika Polei,ThomasMikolajick,Josef Willer

申请号：US11313247申请日：20051220

公开号：US20070141799A1公开日：20070621

专利附图：

摘要：A method for fabricating stacked non-volatile memory cells and non-volatile

memory cell arrays are disclosed. A semiconductor wafer is provided having a charge-trapping layer and a conductive layer deposited on the surface of the semiconductorwafer. Using a mask layer on top of the conductive layer, contact holes are formed intowhich a contact fill material is deposited. A further conductive layer is deposited on thesurface of the semiconductor wafer and is patterned so as to form word lines. Thecontact fill material is connected to a contact plug using the contact holes with thecontact fill material as a landing pad.

申请人：Dominik Olligs,Torsten Mueller,Karl-Heinz Kuesters,Veronika Polei,ThomasMikolajick,Josef Willer

地址：Dresden DE,Dresden DE,Boxdorf DE,Dresden DE,Dresden DE,Riemerling DE

国籍：DE,DE,DE,DE,DE,DE

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