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Dual metal stud bumping for flip chip applications

2024-10-18 来源:威能网
专利内容由知识产权出版社提供

专利名称:Dual metal stud bumping for flip chip

applications

发明人:Rajeev Joshi,Consuelo Tangpuz,Margie T.

Rios,Erwin Victor R. Cruz

申请号:US11404650申请日:20060414公开号:US07501337B2公开日:20090310

专利附图:

摘要:A method for forming a stud bumped semiconductor die is disclosed. Themethod includes forming a ball at the tip of a coated wire passing through a hole in a

capillary, where the coated wire has a core and an oxidation-resistant coating. The formedball is pressed to the conductive region on the semiconductor die. The coated wire is cut,thereby leaving a conductive stud bump on the conductive region, where the conductivestud bump includes an inner conductive portion and an outer oxidation-resistant layer.

申请人:Rajeev Joshi,Consuelo Tangpuz,Margie T. Rios,Erwin Victor R. Cruz

地址:Cupertino CA US,Lapulapu PH,Mandaue PH,Koronadal PH

国籍:US,PH,PH,PH

代理机构:Townsend and Townsend and Crew LLP

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